The memory shift process because both are called memory processing types. ReRAM, also known as RRAM (Resistive Random-Access Memory), is regarded as a type of memristor technology — a passive two-terminal electronic system designed to convey only the property of an electronic component that allows it to remember the last resistance it had before it was shut down.
ReRAM stores data uses ions (charged atoms), rather than electrons, as variations in electrical resistance. Resistive memory can decrease the energy consumption of modern IT systems while increasing efficiency, according to researchers at the Jülich Aachen Research Alliance (JARA). In resistive switching memory cells (ReRAMs), ions work in a similar manner to a battery on a nanometer scale. For example, the cells have two electrodes made of silver and platinum, at which the ions dissolve and then precipitate again. This modifies the electrical resistance, which can be used to store data. There is also another consequence of the reduction and oxidation processes — they produce electric voltage. ReRAM explicitly works by producing physical defects in a layer of oxide material using the tool. Such defects are called oxygen vacancies, and the ReRAM behaves like a semiconductor but with oxygen ions; such vacancies represent two values in a binary scheme, instead of the electrons and holes of a semiconductor.
A number of companies currently have proprietary versions of ReRAM. Different types of ReRAM are based on the use of different dielectric materials, including metal oxides.
Segmentation
On the basis of type, the ReRAM Market has been segmented into oxide-based ReRAM and conductive bridging RAM. Conductive bridging RAM is expected to lead in the market due to its use in health trackers and IoT devices. On the other hand, oxide-based ReRAM can capture a large market share owing to its implementation in crossbar architectures. Integration of discrete chips due to its endurance and low power consumption can drive its demand share over the forecast period.
Based on end-user, the market has been segmented into consumer electronics, IT & telecom, aerospace & defense, healthcare, and others. The consumer electronics vertical is estimated to perform exceptionally owing to demand for high-resolution displays with high capacity storage. The high computing power of ReRAM and high switching speed can spur its demand in consumer electronic devices. Increasing demand for connected devices owing to AI, IoT, and wearables coupled with demand for strong capacity servers will augment the segment growth.
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Key Players
The key players in the ReRAM market are Crossbar Inc. (US), Fujitsu Limited (Japan), Intel Corporation (US), Panasonic Corporation (Japan), Semiconductor Manufacturing International Corporation (China), SK Hynix Inc. (South Korea), Adesto Technologies Corporation (US), Micron Technology, Inc. (US), TSMC (Taiwan), 4DS Memory Limited (US), and Reliance Memory (China), Sony Corporation (Japan), SanDisk (US), Weebit Nano (Australia), and Rambus Incorporated (US).
Regional Analysis
Asia-Pacific is expected to hold the largest market share in the ReRAM market from 2019 to 2025. Within the region, China (including Taiwan) is the leading producer of electronic products and one of the key investment destinations for market players. Furthermore, it accounts for a significant share of ReRAM production. North America holds a significant share in the ReRAM market owing to the high concentration of market players, easy accessibility of capable technical expertise, and growing adoption of ReRAM across key application areas.
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